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Some properties of semiconductor superlatticesVOOS, M.Annales des télécommunications. 1988, Vol 43, Num 7-8, pp 357-364, issn 0003-4347Article

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Propriétés électroniques des super-réseaux semiconducteurs = Electronic properties of semiconductor superlatticesVOOS, M.Acta electronica. 1983, Vol 25, Num 2, pp 163-172, issn 0001-558XArticle

Electronic properties of HgTe-CdTe superlatticesVOOS, M.Surface science reports. 1987, Vol 7, Num 5, pp 189-209, issn 0167-5729Serial Issue

ELECTRON-HOLE DROPS IN DOPED GEA LA GUILLAUME CB; VOOS M.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 11; PP. 1585-1589; ABS. FR.; BIBL. 16 REF.Serial Issue

FORMATION OF ELECTRON-HOLE DROPS IN SIVOISIN P; ETIENNE B; VOOS M et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 2; PP. 1117-1118; BIBL. 13 REF.Article

RADIUS OF ELECTRON-HOLE DROPS IN SILICONVOISIN P; ETIENNE B; VOOS M et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 5; PP. 541-544; BIBL. 18 REF.Article

FORMATION OF ELECTRON-HOLE DROPS IN SIVOISIN P; ETIENNE B; VOOS M et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 2; PP. 1117-1118; BIBL. 13 REF.Article

MEASUREMENT OF ELECTRON-HOLE DROP SIZE IN DOPED GERMANIUM BY LIGHT SCATTERINGWASHINGTON MA; WORLOCK JM; VOOS M et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 5; PP. 549-551; BIBL. 14 REF.Article

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THE PUZZLE OF DOUBLE-DOPED SI(B,IN)= SHARP LINE SERIES IN NEAR-BAND-EDGE PHOTOLUMINESCENCEZIEMELIS UO; PARSONS RR; VOOS M et al.1979; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1979; VOL. 32; NO 6; PP. 445-448; BIBL. 10 REF.Article

LUMINESCENCE OF SEMICONDUCTING VO₂.MARUANI A; MERENDA P; VOOS M et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 12; PP. 1485-1486; BIBL. 10 REF.Article

ELECTRON-HOLE DROPS IN PURE GEBENOIT A LA GUILLAUME C; VOOS M.1973; PHYS. REV., B; U.S.A.; DA. 1973; VOL. 7; NO 4; PP. 1723-1727; BIBL. 21 REF.Serial Issue

EXCITONIC LUMINESCENCE OF CUCL: REABSORPTION AND POLARITON EFFECTSSERMAGE B; VOOS M; SCHWAB C et al.1979; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1979; VOL. 20; NO 8; PP. 3245-3253; BIBL. 40 REF.Article

TEMPERATURE DEPENDENCE OF THE RADIUS OF ELECTRON-HOLE DROPS IN GE.GROSSMAN B; SHAKLEE KL; VOOS M et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 23; NO 5; PP. 271-273; ABS. ALLEM.; BIBL. 9 REF.Article

DETERMINATION OF NONRADIATIVE DECAY RATE IN ELECTRON-HOLE DROPS IN GE AT 1.6^OK.LEHENY RF; SHAH J; VOOS M et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 20; NO 8; PP. 819-821; BIBL. 13 REF.Article

MEASUREMENT OF THE SPATIAL DISTRIBUTION OF ELECTRON-HOLE DROPS IN GE.VOOS M; SHAKLEE KL; WORLOCK JM et al.1974; PHYS. REV. LETTERS; U.S.A.; DA. 1974; VOL. 33; NO 19; PP. 1161-1164; BIBL. 20 REF.Article

OPTICAL STUDIES OF IN⁰,53)GA⁰,47)ASMARZIN JY; BENCHIMOL JL; SERMAGE B et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 2; PP. 79-82; ABS. FRE; BIBL. 9 REF.Article

INVESTIGATIONS OF CONDENSATION PHENOMENA OF ELECTRON-HOLE DROPS IN PURE GE.ETIENNE B; BENOIT A LA GUILLAUME C; VOOS M et al.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 14; NO 2; PP. 712-718; BIBL. 17 REF.Article

ELECTRON-HOLE DROPS IN GE-SI ALLOYS.BENOIT A LA GUILLAUME C; VOOS M; PETROFF Y et al.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 12; PP. 4995-5002; BIBL. 40 REF.Article

TWO-DIMENSIONAL ELECTRON GAS IN A IN_0.53GA_0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONGULDNER Y; VIEREN JP; VOISIN P et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 10; PP. 877-878; BIBL. 12 REF.Article

LUMINESCENCE LINESHAPE OF FREE EXCITONS AND ELECTRON-HOLE DROPS IN SIVOISIN P; VOOS M; BENOIT A LA GUILLAUME C et al.1979; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1979; VOL. 31; NO 11; PP. 901-904; BIBL. 10 REF.Article

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INVESTIGATION OF THE SHAPE OF A CLOUD OF ELECTRON-HOLE DROPLETS IN GERMANIUM.MATTOS JVC; SHAKLEE KL; VOOS M et al.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 13; NO 12; PP. 5603-5605; BIBL. 9 REF.Article